Die Sort
Georg Reinecke
After sawing the wafer into individual die, the die often times need to be picked from the sawing tape and placed into either, Waffle Packs, Gel Packs, or inserted into Tape and Reel pockets. Pac Tech has the capabilities to perform all of these operations either manually for low volume applications or fully automatic for high volume applications.
The die are peeled from the tape and manually loaded in die trays. Die are carefully peeled from the wafer tape and deposited on a special handling film utilizing a die-tape separator. An operator then moves the die from the film to the appropriate carrier utilizing a vacuum pencil.
In automated process, the wafer remains on the ring frame and is loaded onto the pick and place equipment. As it is clamped into place, the tape is stretched to increase the space between each die. The carriers are loaded onto the discharge fixture of the machine. Eject pins push up through the wafer tape to elevate the die and loosen it from the tape. The vacuum pickup arm retrieves the die and deposits the die in the carrier. The machine is programmed to recognize ink dots left on the surface of the die during the wafer probe and visual inspection operations. Electronic maps can be used to identify rejected dies.
Wafer |
Material: |
Si, GaAs, SiGe, InP, LiTaO3,
Ceramics, Laminates, Glass, Quartz |
Size: |
100 mm |
125 mm |
150 mm |
200 mm |
300 mm |
Thickness: Standard
Special |
200-550 mm
100-200 mm |
200-650 mm
100-200 mm |
200-700 mm
100-200 mm |
200-750 mm
100-200 mm |
350-800 mm
200-350 mm |
Backside: Standard
Special
Special |
Thermal Oxide, SiO2, Polymer
Metallized (e.g. TiNiAg, Au, etc…) require a protective resist or laminate
Ground (thinned) normally requires a protective resist or laminate |
Quality: |
No Chips |
Passivation |
Materials: Inorganic
Polymeric |
Si3N4, SiO2, SiOxNy, PSG
Polyimide, BCB, SU8, WPR |
Quality: |
Defect and pinhole free without any residues on the bond pads |
Pad |
Metallurgy |
Cu |
AlCu |
AlSiCu |
Ni |
Thickness: Flip Chip
*WLCSP
Wirebond |
>0.25 µm
>0.25 µm
>0.25 µm |
>0.8 µm
>1.5 µm
>0.8 µm |
>0.8 µm
>1.5 µm
>0.8 µm |
>0.25 µm
>0.25 µm
>0.25 µm |
Pad Geometries: |
Circular |
Octagonal |
Square |
Pad Size: Standard
Special |
>40 µm diameter
<10 µm diameter |
>40 µm x 40 µm
<10 µm x 10 µm |
>20 µm x 20 µm
<10 µm x 10 µm |
Pitch: |
Pad to Pad distance must be > 2 x Nickel Height + 10 µm |
Quality: |
Free of organic and silicon base contaminates |
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* Note: For WLCSP designs with “thin” aluminum, PacTech can resurface the pad with thicker aluminum.
Die |
Dicing Streets: |
Doped Si must be isolated (by thermal oxide), can be protected by resist
Exposed test pads and structures will plate, can be protected by a resist |
Probe Marks: |
Acceptable (if < ¼ of pad size) must not penetrate Al or Cu pad |
Ink Dots: |
Hard cured epoxy inks are usually acceptable
Stability of ink must be evaluated |
Fuse Links: Al fuses
poly Si fuses |
Aluminum: Must be protected by a resist
Polysilicon: Unblown are usually acceptable, these may require a resist |
Quality: |
Passivation pin holes will require a resist coating to prevent plating |
Bumping service
(Brochure download)
Questions
(Contact us)